Synthetic Lateral Metal-Semiconductor Heterostructures of Transition Metal Disulfides
نویسندگان
چکیده
منابع مشابه
Band offsets in transition-metal oxide heterostructures
We measured valence band offsets in Ta2O5–WO3, Ta2O5–Nb2O5 and WO3–Nb2O5 heterostructure couples by in situ x-ray photoelectron spectroscopy, immediately following the bi-layer growth in ultra-high vacuum. Conduction band offsets were estimated using the measured valence band offsets in conjunction with the literature values for the respective band gaps. The offsets between Ta2O5 and WO3 and be...
متن کاملCrystal structures of dense lithium: a metal-semiconductor-metal transition.
Ab initio random structure searching and single-crystal x-ray diffraction have been used to determine the full structures of three phases of lithium, recently discovered at low temperature above 60 GPa. A structure with C2mb symmetry, calculated to be a poor metal, is proposed for the oC88 phase (60-65 GPa). The oC40 phase (65-95 GPa) is found to have a lowest-enthalpy structure with C2cb symme...
متن کاملMetal-insulator-semiconductor heterostructures for plasmonic hot-carrier optoelectronics.
Plasmonic hot-electron devices are attractive candidates for light-energy harvesting and photodetection applications. For solid state devices, the most compact and straightforward architecture is the metal-semiconductor Schottky junction. However convenient, this structure introduces limitations such as the elevated dark current associated to thermionic emission, or constraints for device desig...
متن کاملMetal-insulator transition in a doped semiconductor
Millikelvin measurements of the conductivity as a function of donor density and uniaxial stress in bulk samples of phosphorus-doped silicon establish that the transition from metal to insulator is continuous, but sharper than predicted by scaling theories of localization. The divergence of the dielectric susceptibility as the transition is approached from below also points out problems in curre...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Journal of the American Chemical Society
سال: 2018
ISSN: 0002-7863,1520-5126
DOI: 10.1021/jacs.8b07806